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D. Kaplan , I. Solomon , N.F. Mott
J. Physique Lett., 39 4 (1978) 51-54
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277 articles | Pages :
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PROGRESS IN SIC MATERIALS/DEVICES AND THEIR COMPETITION
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Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance
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Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
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Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon using Pulsed ENDOR
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Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor
A. Kunold, A. Balocchi, F. Zhao, et al. Physical Review B 83 (16) 165202 (2011) https://doi.org/10.1103/PhysRevB.83.165202
Electrically detected crystal orientation dependent spin-Rabi beat oscillation of c-Si(111)/SiO2interface states
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Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon
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An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors
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Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots
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Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors
B. C. Bittel, P. M. Lenahan, J. T. Ryan, J. Fronheiser and A. J. Lelis Applied Physics Letters 99 (8) (2011) https://doi.org/10.1063/1.3630024
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Spin-Dependent Recombination between Phosphorus Donors in Silicon andSi/SiO2Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
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T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
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Solid-state magnetometer using electrically detected magnetic resonance
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Organic Spintronics
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Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes
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Spin dependent tunneling spectroscopy in 1.2 nm dielectrics
J. T. Ryan, P. M. Lenahan, A. T. Krishnan and S. Krishnan Journal of Applied Physics 108 (6) (2010) https://doi.org/10.1063/1.3482071
A. Jander and P. Dhagat 1 (2009) https://doi.org/10.1109/ISDRS.2009.5378121
Observation of precursor pair formation of recombining charge carriers
Jan Behrends, Klaus Lips and Christoph Boehme Physical Review B 80 (4) (2009) https://doi.org/10.1103/PhysRevB.80.045207
Spin‐dependent processes in ZnPc single layer devices
Sebastian Schaefer, Somaieh Saremi, Jan Behrends, Konstantinos Fostiropoulos, Klaus Lips and Wolfgang Harneit physica status solidi (b) 246 (11-12) 2844 (2009) https://doi.org/10.1002/pssb.200982322
Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon
H. Morishita, L. S. Vlasenko, H. Tanaka, et al. Physical Review B 80 (20) 205206 (2009) https://doi.org/10.1103/PhysRevB.80.205206
Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon
W. Akhtar, H. Morishita, L.S. Vlasenko, D.S. Poloskin and K.M. Itoh Physica B: Condensed Matter 404 (23-24) 4583 (2009) https://doi.org/10.1016/j.physb.2009.08.116
Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors
C. J. Cochrane, P. M. Lenahan and A. J. Lelis Journal of Applied Physics 105 (6) (2009) https://doi.org/10.1063/1.3081644
Energy resolved spin dependent tunneling in 1.2 nm dielectrics
J. T. Ryan, P. M. Lenahan, A. T. Krishnan and S. Krishnan Applied Physics Letters 95 (10) (2009) https://doi.org/10.1063/1.3226633
Spin-dependent scattering in a silicon transistor
Rogério de Sousa, Cheuk Chi Lo and Jeffrey Bokor Physical Review B 80 (4) (2009) https://doi.org/10.1103/PhysRevB.80.045320
Electrical detection of electron spin resonance in microcrystalline silicon pin solar cells
J. Behrends, A. Schnegg, M. Fehr, et al. Philosophical Magazine 89 (28-30) 2655 (2009) https://doi.org/10.1080/14786430903008472
Spin Echoes in the Charge Transport through Phosphorus Donors in Silicon
Hans Huebl, Felix Hoehne, Benno Grolik, et al. Physical Review Letters 100 (17) 177602 (2008) https://doi.org/10.1103/PhysRevLett.100.177602
Spin-dependent processes at the crystallineSi-SiO2interface at high magnetic fields
D. R. McCamey, G. W. Morley, H. A. Seipel, et al. Physical Review B 78 (4) 045303 (2008) https://doi.org/10.1103/PhysRevB.78.045303
Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout
G. W. Morley, D. R. McCamey, H. A. Seipel, et al. Physical Review Letters 101 (20) 207602 (2008) https://doi.org/10.1103/PhysRevLett.101.207602
Thin film engineering for N@C60 quantum computers: Spin detection and device patterning approaches
Sebastian Schaefer, Kati Huebener, Wolfgang Harneit, et al. Solid State Sciences 10 (10) 1314 (2008) https://doi.org/10.1016/j.solidstatesciences.2007.12.039
Defects in Microelectronic Materials and Devices
Patrick Lenahan Defects in Microelectronic Materials and Devices (2008) https://doi.org/10.1201/9781420043778.ch6
Characterization of Semiconductor Heterostructures and Nanostructures
Andre Stesmans and Valery V. Afanas'ev Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008) https://doi.org/10.1016/B978-0-444-53099-8.00013-0
C.J. Cochrane, P.M. Lenahan and A.J. Lelis 68 (2008) https://doi.org/10.1109/IRWS.2008.4796089
Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors
J. P. Campbell, P. M. Lenahan, A. T. Krishnan and S. Krishnan Journal of Applied Physics 103 (4) 044505 (2008) https://doi.org/10.1063/1.2844348
C.J. Cochrane, P. M. Lenahan and A.J. Lelis 1 (2008) https://doi.org/10.1109/IRWS.2008.4796135
Deep level defects involved in MOS device instabilities
P.M. Lenahan Microelectronics Reliability 47 (6) 890 (2007) https://doi.org/10.1016/j.microrel.2006.10.016
Deep level defects which limit current gain in 4H SiC bipolar junction transistors
C. J. Cochrane, P. M. Lenahan and A. J. Lelis Applied Physics Letters 90 (12) (2007) https://doi.org/10.1063/1.2714285
Coherent defect spectroscopy with pulsed optically and electrically detected magnetic resonance
C. Boehme and K. Lips Journal of Materials Science: Materials in Electronics 18 (S1) 285 (2007) https://doi.org/10.1007/s10854-007-9218-4
Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
J. P. Campbell, P. M. Lenahan, A. T. Krishnan and S. Krishnan Applied Physics Letters 91 (13) (2007) https://doi.org/10.1063/1.2790776
J.P. Campbell, P.M. Lenahan, A.T. Krishnan and S. Krishnan 503 (2007) https://doi.org/10.1109/RELPHY.2007.369942
Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures
J. T. Ryan, P. M. Lenahan, G. Bersuker and P. Lysaght Applied Physics Letters 90 (17) (2007) https://doi.org/10.1063/1.2734478
Atomic-scale defects involved in the negative-bias temperature instability
Jason P. Campbell, Patrick M. Lenahan, Corey J. Cochrane, Anand T. Krishnan and Srikanth Krishnan IEEE Transactions on Device and Materials Reliability 7 (4) 540 (2007) https://doi.org/10.1109/TDMR.2007.911379
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Electrical detection of coherent 31P spin quantum states
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C.J. Cochrane, P. Lenahan, J.P. Campbell, G. Bersuker and A. Neugroschel 11 (2006) https://doi.org/10.1109/IRWS.2006.305201
Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance
Morgen S. Dautrich, Patrick M. Lenahan and Aivars J. Lelis Applied Physics Letters 89 (22) (2006) https://doi.org/10.1063/1.2388923
Observations of NBTI-Induced Atomic-Scale Defects
J.P. Campbell, P.M. Lenahan, A.T. Krishnan and S. Krishnan IEEE Transactions on Device and Materials Reliability 6 (2) 117 (2006) https://doi.org/10.1109/TDMR.2006.876598
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
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Identification of Deep Level Defects in SiC Bipolar Junction Transistors
Patrick M. Lenahan, N.T. Pfeiffenberger, T.G. Pribicko and Aivars J. Lelis Materials Science Forum 527-529 567 (2006) https://doi.org/10.4028/www.scientific.net/MSF.527-529.567
Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation
V. Rajevac, C. Boehme, C. Michel, et al. Physical Review B 74 (24) 245206 (2006) https://doi.org/10.1103/PhysRevB.74.245206
The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects
C. Boehme and K. Lips Physica B: Condensed Matter 376-377 930 (2006) https://doi.org/10.1016/j.physb.2005.12.231
Recombination at silicon dangling bonds
C. Boehme, F. Friedrich, T. Ehara and K. Lips Thin Solid Films 487 (1-2) 132 (2005) https://doi.org/10.1016/j.tsf.2005.01.050
J.P. Campbell, P.M. Lenahan, A.T. Krishnan and S. Krishnan 4 pp. (2005) https://doi.org/10.1109/IRWS.2005.1609551
Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors
T. G. Pribicko, J. P. Campbell, P. M. Lenahan, W. Tsai and A. Kerber Applied Physics Letters 86 (17) (2005) https://doi.org/10.1063/1.1919397
Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination
David J. Meyer, Patrick M. Lenahan and Aivars J. Lelis Applied Physics Letters 86 (2) (2005) https://doi.org/10.1063/1.1851592
Non-destructive observation of electrically detected magnetic resonance in bulk material using AC bias
Toshiyuki Sato, Hidekatsu Yokoyama and Hiroaki Ohya Journal of Magnetic Resonance 175 (1) 73 (2005) https://doi.org/10.1016/j.jmr.2005.03.018
Direct observation of the structure of defect centers involved in the negative bias temperature instability
J. P. Campbell, P. M. Lenahan, A. T. Krishnan and S. Krishnan Applied Physics Letters 87 (20) (2005) https://doi.org/10.1063/1.2131197
Visualizing an Artificial Recombination Pattern Formed by Localized Illumination in a Semiconductor
Toshiyuki Sato, Hidekatsu Yokoyama and Hiroaki Ohya Chemistry Letters 33 (6) 650 (2004) https://doi.org/10.1246/cl.2004.650
A pulsed EDMR study of hydrogenated microcrystalline silicon at low temperatures
Christoph Boehme and Klaus Lips physica status solidi (c) 1 (5) 1255 (2004) https://doi.org/10.1002/pssc.200304326
Investigation of electronic transitions in semiconductors with pulsed electrically detected magnetic resonance
C. Boehme and K. Lips Applied Magnetic Resonance 27 (1-2) 109 (2004) https://doi.org/10.1007/BF03166306
Point Defects in Semiconductors and Insulators
Johann-Martin Spaeth and Harald Overhof Springer Series in Materials Science, Point Defects in Semiconductors and Insulators 51 265 (2003) https://doi.org/10.1007/978-3-642-55615-9_7
Nano and Giga Challenges in Microelectronics
P.M. Lenahan Nano and Giga Challenges in Microelectronics 237 (2003) https://doi.org/10.1016/B978-044451494-3/50007-X
Theory of time-domain measurement of spin-dependent recombination with pulsed electrically detected magnetic resonance
Christoph Boehme and Klaus Lips Physical Review B 68 (24) (2003) https://doi.org/10.1103/PhysRevB.68.245105
Light-intensity and temperature dependence of trap-dangling bond recombination in hydrogenated microcrystalline silicon
Christoph Boehme and Klaus Lips MRS Proceedings 715 (2002) https://doi.org/10.1557/PROC-715-A16.2
Time domain measurement of spin-dependent recombination – A novel defect spectroscopy method
Christoph Boehme, Peter Kanschat and Klaus Lips Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 186 (1-4) 30 (2002) https://doi.org/10.1016/S0168-583X(01)00869-2
Spin-Dependent Recombination - An Electronic Readout Mechanism for Solid State Quantum Computers
Chr. Boehme and K. Lips physica status solidi (b) 233 (3) 427 (2002) https://doi.org/10.1002/1521-3951(200210)233:3<427::AID-PSSB427>3.0.CO;2-J
Time-domain measurement of spin-dependent recombination in microcrystalline silicon
Christoph Boehme, Peter Kanschat and Klaus Lips Journal of Non-Crystalline Solids 299-302 566 (2002) https://doi.org/10.1016/S0022-3093(01)01023-7
Time domain measurement of spin-dependent recombination
Christoph Boehme and Klaus Lips Applied Physics Letters 79 (26) 4363 (2001) https://doi.org/10.1063/1.1428623
Quantum-beat recombination echoes
C Boehme, P Kanschat and K Lips Europhysics Letters (EPL) 56 (5) 716 (2001) https://doi.org/10.1209/epl/i2001-00579-4
Electrically Detected Electron Spin Resonance of Pt/C70/In/Al Schottky-Junction System
Ichiro Hiromitsu, Takahiro Kitauchi and Takashi Ito Journal of the Physical Society of Japan 70 (1) 311 (2001) https://doi.org/10.1143/JPSJ.70.311
Imaging of Electrically Detected Magnetic Resonance of a Silicon Wafer
Toshiyuki Sato, Hidekatsu Yokoyama, Hiroaki Ohya and Hitoshi Kamada Journal of Magnetic Resonance 153 (1) 113 (2001) https://doi.org/10.1006/jmre.2001.2427
Resonance-Field Dependence in Electrically Detected Magnetic Resonance: Effects of Exchange Interaction
Kôichi Fukui, Toshiyuki Sato, Hidekatsu Yokoyama, Hiroaki Ohya and Hitoshi Kamada Journal of Magnetic Resonance 149 (1) 13 (2001) https://doi.org/10.1006/jmre.2000.2277
Development and evaluation of an electrically detected magnetic resonance spectrometer operating at 900 MHz
Toshiyuki Sato, Hidekatsu Yokoyama, Hiroaki Ohya and Hitoshi Kamada Review of Scientific Instruments 71 (2) 486 (2000) https://doi.org/10.1063/1.1150229
Thermal annealing effects on polyaniline studied by electrically detected magnetic resonance
C.F.O Graeff and C.A Brunello Journal of Non-Crystalline Solids 273 (1-3) 289 (2000) https://doi.org/10.1016/S0022-3093(00)00175-7
Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance
S. T. B. Goennenwein, M. W. Bayerl, M. S. Brandt and M. Stutzmann Physical Review Letters 84 (22) 5188 (2000) https://doi.org/10.1103/PhysRevLett.84.5188
New features of electrically detected magnetic resonance in silicon p–n diodes
E.T Hornmark, S.A Lyon, E.H Poindexter and C.F Young Solid State Communications 116 (5) 279 (2000) https://doi.org/10.1016/S0038-1098(00)00317-3
Spin-Dependent Processes In Thin-Film Silicon Solar Cells
K. Lips, R. Müller, P. Kanschat, F. Finger and W. Fuhs MRS Proceedings 609 A18.2 (2000) https://doi.org/10.1557/PROC-609-A18.2
Measuring method of longitudinally detected ESR signal intensities against resonant frequencies at 250 to 950 MHz in a constant microwave field
T. Sato, H. Yokoyama, H. Ohya and H. Kamada Applied Magnetic Resonance 16 (1) 33 (1999) https://doi.org/10.1007/BF03161913
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