La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
D. Kaplan , I. Solomon , N.F. Mott
J. Physique Lett., 39 4 (1978) 51-54
Citations de cet article :
277 articles | Pages :
Spin-dependent recombination of photoinduced carriers in phthalocyanine/C60heterojunctions
Ichiro Hiromitsu, Yoshiaki Kaimori, Mayuko Kitano and Takashi Ito Physical Review B 59 (3) 2151 (1999) https://doi.org/10.1103/PhysRevB.59.2151
Electrically Detected Magnetic Resonance Signal Intensity at Resonant Frequencies from 300 to 900 MHz in a Constant Microwave Field
Toshiyuki Sato, Hidekatsu Yokoyama, Hiroaki Ohya and Hitoshi Kamada Journal of Magnetic Resonance 139 (2) 422 (1999) https://doi.org/10.1006/jmre.1999.1807
Electrically detected electron spin resonance of doped-phthalocyanine/C60 heterojunction
I. Hiromitsu, Y. Kaimori, M. Kitano, R. Shinto and T. Ito Synthetic Metals 102 (1-3) 1439 (1999) https://doi.org/10.1016/S0379-6779(98)01443-X
Electrically detected magnetic resonance signal from iron contaminated Czochralski silicon crystal
T. Mchedlidze and K. Matsumoto Journal of Applied Physics 83 (8) 4042 (1998) https://doi.org/10.1063/1.367160
Recombination centers inGaAs/Al0.4Ga0.6Asheterostructures investigated by optically and electrically detected magnetic resonance
T. Wimbauer, M. S. Brandt, M. W. Bayerl, et al. Physical Review B 58 (8) 4892 (1998) https://doi.org/10.1103/PhysRevB.58.4892
Electrically detected magnetic resonance in photoexcited fullerenes
T. Eickelkamp, S. Roth and M. Mehring Molecular Physics 95 (5) 967 (1998) https://doi.org/10.1080/00268979809483230
Electrically detected magnetic resonance of a-Si:H at low magnetic fields: the influence of hydrogen on the dangling bond resonance
M.S Brandt, M.W Bayerl, M Stutzmann and C.F.O Graeff Journal of Non-Crystalline Solids 227-230 343 (1998) https://doi.org/10.1016/S0022-3093(98)00073-8
Identification of Defects in Semiconductors
J.-M. Spaeth Semiconductors and Semimetals, Identification of Defects in Semiconductors 51 45 (1998) https://doi.org/10.1016/S0080-8784(08)63054-9
Photovoltaic effect and electrically detected electron spin resonance of a H2-phthalocyanine/C60 heterojunction
I. Hiromitsu, Y. Kaimori and T. Ito Solid State Communications 104 (9) 511 (1997) https://doi.org/10.1016/S0038-1098(97)00344-X
Electrically detected electron spin resonance (EDESR) in thiophene thin films and a thiophene/C60 double layer
A Maier, A Grupp and M Mehring Solid State Communications 99 (9) 623 (1996) https://doi.org/10.1016/0038-1098(96)00198-6
Complete theoretical analysis of the Kaplan-Solomon-Mott mechanism of spin-dependent recombination in semiconductors
A. V. Barabanov, O. V. Tretiak and V. A. L’vov Physical Review B 54 (4) 2571 (1996) https://doi.org/10.1103/PhysRevB.54.2571
Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes
N. M. Reinacher, M. S. Brandt and M. Stutzmann Journal of Applied Physics 80 (8) 4541 (1996) https://doi.org/10.1063/1.363435
Spin-dependent dynamical processes of excited states in semiconductors
J.-M. Spaeth Journal of Luminescence 66-67 462 (1995) https://doi.org/10.1016/0022-2313(95)00191-3
Electron paramagnetic resonance versus spin-dependent recombination: Excited triplet states of structural defects in irradiated silicon
L. S. Vlasenko, Yu. V. Martynov, T. Gregorkiewicz and C. A. J. Ammerlaan Physical Review B 52 (2) 1144 (1995) https://doi.org/10.1103/PhysRevB.52.1144
Electrical detection of electron paramagnetic resonance: New possibilities for the study of point defects
B. Stich, S. Greulich-Weber and J.-M. Spaeth Journal of Applied Physics 77 (4) 1546 (1995) https://doi.org/10.1063/1.358906
Spin-Dependent Transport in GaN Light Emitting Diodes
M. S. Brandt, N. M. Reinacher, O. Ambacher and M. Stutzmann MRS Proceedings 395 (1995) https://doi.org/10.1557/PROC-395-657
Detailed investigation of a nonradiative recombination center in Si by electrically detected magnetic resonance
Z. Xiong and D. J. Miller Journal of Applied Physics 77 (10) 5201 (1995) https://doi.org/10.1063/1.359268
Recombination centers in electron‐irradiated Czochralski silicon solar cells
M. Zazoui, J. C. Bourgoin, D. Stievenard, D. Deresmes and G. Strobl Journal of Applied Physics 76 (2) 815 (1994) https://doi.org/10.1063/1.357755
Spin-dependent photoconductivity in hydrogenated amorphous germanium and silicon-germanium alloys
C. F. O. Graeff, M. Stutzmann and M. S. Brandt Physical Review B 49 (16) 11028 (1994) https://doi.org/10.1103/PhysRevB.49.11028
Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode
B Stich, S Gruelich-Weber, J -M Spaeth and H Overhof Semiconductor Science and Technology 8 (7) 1385 (1993) https://doi.org/10.1088/0268-1242/8/7/031
Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes
E.H. Poindexter, F.C. Rong, W.R. Buchwald, et al. Colloids and Surfaces A: Physicochemical and Engineering Aspects 72 119 (1993) https://doi.org/10.1016/0927-7757(93)80458-Q
Effet du Spin Électronique Sur La Conduction De Semiconducteurs Impliques Dans des Jonctions de Type Semiconducteur‐Métal
A. Gire, Mme G. Lomaglio and J. G. Théobald Bulletin des Sociétés Chimiques Belges 102 (9) 589 (1993) https://doi.org/10.1002/bscb.19931020905
Microscopic mechanisms of interface state generation by electrical stress
J.H. Stathis Microelectronic Engineering 22 (1-4) 191 (1993) https://doi.org/10.1016/0167-9317(93)90155-X
Recombination in a-Si:H films and pin-structures studied by electrically detected magnetic resonance (EDMR)
W. Fuhs and K. Lips Journal of Non-Crystalline Solids 164-166 541 (1993) https://doi.org/10.1016/0022-3093(93)90609-2
High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra
J.W. Gabrys, P.M. Lenahan and W. Weber Microelectronic Engineering 22 (1-4) 273 (1993) https://doi.org/10.1016/0167-9317(93)90172-2
An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface
M. Lannoo, D. Vuillaume, D. Deresmes and D. Stiévenard Microelectronic Engineering 22 (1-4) 143 (1993) https://doi.org/10.1016/0167-9317(93)90147-W
General expression for the electrically detected magnetic resonance signal from semiconductors
Z. Xiong and D. J. Miller Applied Physics Letters 63 (3) 352 (1993) https://doi.org/10.1063/1.110040
Spin-dependent transport at silicon grain boundaries
C. H. Seager, E. L. Venturini and W. K. Schubert Journal of Applied Physics 71 (10) 5059 (1992) https://doi.org/10.1063/1.350607
Spin dependent photocurrents in ribbon solar cells
C. H. Seager, E. L. Venturini and W. K. Schubert Applied Physics Letters 60 (14) 1732 (1992) https://doi.org/10.1063/1.107200
Electrically detected magnetic resonance of a transition metal related recombination center in Sip–ndiodes
F. C. Rong, G. J. Gerardi, W. R. Buchwald, et al. Applied Physics Letters 60 (5) 610 (1992) https://doi.org/10.1063/1.106569
Identification of an interface defect generated by hot electrons in SiO2
J. H. Stathis and D. J. DiMaria Applied Physics Letters 61 (24) 2887 (1992) https://doi.org/10.1063/1.108066
Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes
F.C. Rong, W.R. Buchwald, E.H. Poindexter, W.L. Warren and D.J. Keeble Solid-State Electronics 34 (8) 835 (1991) https://doi.org/10.1016/0038-1101(91)90229-R
Optically detected magnetic resonance of dislocations in silicon
V. Kveder, P. Omling, H. G. Grimmeiss and Yu. A. Osipyan Physical Review B 43 (8) 6569 (1991) https://doi.org/10.1103/PhysRevB.43.6569
Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors
J. T. Krick, P. M. Lenahan and G. J. Dunn Applied Physics Letters 59 (26) 3437 (1991) https://doi.org/10.1063/1.105699
Spin-dependent conductivity in amorphous hydrogenated silicon
Martin S. Brandt and Martin Stutzmann Physical Review B 43 (6) 5184 (1991) https://doi.org/10.1103/PhysRevB.43.5184
Excitons and light-induced degradation of amorphous hydrogenated silicon
Martin S. Brandt and Martin Stutzmann Applied Physics Letters 58 (15) 1620 (1991) https://doi.org/10.1063/1.105144
Spin dependent recombination at the silicon/silicon dioxide interface
P.M. Lenahan and M.A. Jupina Colloids and Surfaces 45 191 (1990) https://doi.org/10.1016/0166-6622(90)80023-W
Electron Spin Resonance Studies of Silicon Dioxide Films on Silicon in Integrated Circuits Using Spin Dependent Recombination
M. A. Jupina and P. M. Lenahan MRS Proceedings 159 (1989) https://doi.org/10.1557/PROC-159-191
Spin-dependent and localisation effects at Si/SiO2device interfaces
B Henderson, M Pepper and R L Vranch Semiconductor Science and Technology 4 (12) 1045 (1989) https://doi.org/10.1088/0268-1242/4/12/008
A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interface
M.A. Jupina and P.M. Lenahan IEEE Transactions on Nuclear Science 36 (6) 1800 (1989) https://doi.org/10.1109/23.45372
Spin-dependent pair generation at Si/SiO2 interfaces
R. L. Vranch, B. Henderson and M. Pepper Applied Physics Letters 53 (14) 1299 (1988) https://doi.org/10.1063/1.100450
Magnetic-spin effects in chemistry and molecular physics
Ya.B. Zel'dovich, Anatolii L. Buchachenko and E.L. Frankevich Uspekhi Fizicheskih Nauk 155 (5) 3 (1988) https://doi.org/10.3367/UFNr.0155.198805a.0003
A note on vitrification of semiconductors
S.D. Savransky Journal of Non-Crystalline Solids 101 (1) 130 (1988) https://doi.org/10.1016/0022-3093(88)90380-8
Spin-dependent recombination in irradiated Si/SiO2 device structures
R. L. Vranch, B. Henderson and M. Pepper Applied Physics Letters 52 (14) 1161 (1988) https://doi.org/10.1063/1.99192
The spin-dependent resonance signal from silicon
Z. Kachwalla and D. J. Miller Journal of Applied Physics 62 (7) 2848 (1987) https://doi.org/10.1063/1.339424
Theory of thePbcenter at the <111> Si/SiO2interface
Arthur H. Edwards Physical Review B 36 (18) 9638 (1987) https://doi.org/10.1103/PhysRevB.36.9638
Recombination mechanisms in amorphous semiconductors deduced from resonance measurements
K. Morigaki Journal of Non-Crystalline Solids 77-78 583 (1985) https://doi.org/10.1016/0022-3093(85)90728-8
Physics of Disordered Materials
B. C. Cavenett Physics of Disordered Materials 605 (1985) https://doi.org/10.1007/978-1-4613-2513-0_49
Spin-dependent electrochemical kinetics at a semiconducting photocathode
J.-N. Chazalviel The Journal of Chemical Physics 83 (1) 149 (1985) https://doi.org/10.1063/1.449797
Optical-pumping study of spin-dependent recombination in GaAs
Daniel Paget Physical Review B 30 (2) 931 (1984) https://doi.org/10.1103/PhysRevB.30.931
Effects of light and modulation frequency on spin-dependent trapping at silicon grain boundaries
P. M. Lenahan and W. K. Schubert Physical Review B 30 (3) 1544 (1984) https://doi.org/10.1103/PhysRevB.30.1544
Hydrogenated Amorphous Silicon - Electronic and Transport Properties
K. Morigaki Semiconductors and Semimetals, Hydrogenated Amorphous Silicon - Electronic and Transport Properties 21 155 (1984) https://doi.org/10.1016/S0080-8784(08)63068-9
Recent developments in ESR techniques and results for semiconductor surface regions
Dan Haneman Progress in Surface Science 15 (1) 85 (1984) https://doi.org/10.1016/0079-6816(84)90004-2
Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors
M. C. Chen and D. V. Lang Physical Review Letters 51 (5) 427 (1983) https://doi.org/10.1103/PhysRevLett.51.427
Defect Complexes in Semiconductor Structures
James W. Corbett, Richard L. Kleinhenz and You Zhi-put Lecture Notes in Physics, Defect Complexes in Semiconductor Structures 175 11 (1983) https://doi.org/10.1007/3-540-11986-8_2
Spin dependent trapping in a polycrystalline silicon integrated circuit resistor
W. K. Schubert and P. M. Lenahan Applied Physics Letters 43 (5) 497 (1983) https://doi.org/10.1063/1.94365
Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I
S. Depinna, B. C. Cavenett, I. G. Austin, et al. Philosophical Magazine B 46 (5) 473 (1982) https://doi.org/10.1080/01418638208224023
Recombination ina-Si: H: Spin-dependent effects
R. A. Street Physical Review B 26 (7) 3588 (1982) https://doi.org/10.1103/PhysRevB.26.3588
Spin-dependent recombination at dangling bonds ina-Si:H
R. A. Street, D. K. Biegelsen and J. Zesch Physical Review B 25 (6) 4334 (1982) https://doi.org/10.1103/PhysRevB.25.4334
Optical characterization of deep energy levels in semiconductors
B. Monemar and H.G. Grimmeiss Progress in Crystal Growth and Characterization 5 (1-2) 47 (1982) https://doi.org/10.1016/0146-3535(82)90009-0
Optical enhancement of the electron paramagnetic resonance signal from SiIIIcenters at the Si/SiO2interface
Philip J. Caplan and Edward H. Poindexter Journal of Applied Physics 52 (1) 522 (1981) https://doi.org/10.1063/1.328449
Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon: Optically Detected Magnetic Resonance
Kazuo Morigaki Journal of the Physical Society of Japan 50 (7) 2279 (1981) https://doi.org/10.1143/JPSJ.50.2279
Luminescence and recombination in hydrogenated amorphous silicon
R.A. Street Advances in Physics 30 (5) 593 (1981) https://doi.org/10.1080/00018738100101417
Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonance
K. Morigaki, Y. Sano and I. Hirabayashi Solid State Communications 39 (9) 947 (1981) https://doi.org/10.1016/0038-1098(81)90062-4
Observation of bound exciton and distant pair resonances in amorphous phosphorus
S. Depinna and B.C. Cavenett Solid State Communications 40 (8) 813 (1981) https://doi.org/10.1016/0038-1098(81)90120-4
Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors
B.C. Cavenett Advances in Physics 30 (4) 475 (1981) https://doi.org/10.1080/00018738100101397
Spin dependent surface recombination in silicon p-n junctions: The effect of irradiation
D. Kaplan and M. Pepper Solid State Communications 34 (10) 803 (1980) https://doi.org/10.1016/0038-1098(80)91056-X
Theory of the resonant and non-resonant photoconductivity changes in amorphous silicon
B. Movaghar, B. Ries and L. Schweitzer Philosophical Magazine B 41 (2) 159 (1980) https://doi.org/10.1080/13642818008245377
Spin dependent recombination and luminescence in amorphous silicon
B. Movaghar and L. Schweitzer Journal of Non-Crystalline Solids 35-36 663 (1980) https://doi.org/10.1016/0022-3093(80)90280-X
Spin physics of recombination centers in amorphous silicon
Ionel Solomon Journal of Non-Crystalline Solids 35-36 625 (1980) https://doi.org/10.1016/0022-3093(80)90274-4
States in the gap in non-crystalline semiconductors
N F Mott Journal of Physics C: Solid State Physics 13 (30) 5433 (1980) https://doi.org/10.1088/0022-3719/13/30/011
Electron Spin Resonance Studies of Amorphous Silicon
David K. Biegelsen MRS Proceedings 3 85 (1980) https://doi.org/10.1557/PROC-3-85
Amorphous Semiconductors
I. Solomon Topics in Applied Physics, Amorphous Semiconductors 36 189 (1979) https://doi.org/10.1007/3-540-16008-6_161
Spin dependent conductivity and photovoltage in ZnSe:Mn2+ Schottky barrier diodes
B.C. Cavenett and R.F. Brunwin Solid State Communications 31 (9) 659 (1979) https://doi.org/10.1016/0038-1098(79)90318-1
Spin-dependent donor-acceptor pair recombination in ZnS crystals showing the self-activated emission
J E Nicholls, J J Davies, B C Cavenett, J R James and D J Dunstan Journal of Physics C: Solid State Physics 12 (2) 361 (1979) https://doi.org/10.1088/0022-3719/12/2/023
The magnetic field dependence of luminescence in plasma-deposited amorphous silicon
Robert A. Street, David K. Biegelsen, John C. Knights, Ching Tsang and Robert M. White Solid-State Electronics 21 (11-12) 1461 (1978) https://doi.org/10.1016/0038-1101(78)90225-3
Magnetic Field Dependence of the Photoconductivity in Amorphous Silicon
H. Mell, B. Movaghar and L. Schweitzer physica status solidi (b) 88 (2) 531 (1978) https://doi.org/10.1002/pssb.2220880217
Pages :
201 à 277 sur 277 articles