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Article cité :

Effect of hydrogen on undoped and lightly Si-doped molecular beam epitaxial GaAs layers

Yi-Ching Pao, D. Liu, W. S. Lee and J. S. Harris
Applied Physics Letters 48 (19) 1291 (1986)
https://doi.org/10.1063/1.96956

GaAs crystal growth from coordination compounds using the organometallic chemical vapor deposition process for solar cells

A. Zaouk and G. Constant
Solar & Wind Technology 3 (1) 21 (1986)
https://doi.org/10.1016/0741-983X(86)90044-5

The application of holographic interferometry to the visualization of flow and temperature profiles in a MOCVD reactor cell

J.E. Williams and R.W. Peterson
Journal of Crystal Growth 77 (1-3) 128 (1986)
https://doi.org/10.1016/0022-0248(86)90292-7

Low-temperature phase diagram of the Ga-As-Sb system and liquid-phase-epitaxial growth of lattice-matched GaAsSb on (100) InAs substrates

H. Mani, A. Joullie, F. Karouta and C. Schiller
Journal of Applied Physics 59 (8) 2728 (1986)
https://doi.org/10.1063/1.336981

Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition

J. van de Ven, H. G. Schoot and L. J. Giling
Journal of Applied Physics 60 (5) 1648 (1986)
https://doi.org/10.1063/1.337254

Influence of immiscibility in liquid-phase epitaxy growth of InGaPAs on GaAs

Masahiko Kondo, Sho Shirakata, Taneo Nishino and Yoshihiro Hamakawa
Journal of Applied Physics 60 (10) 3539 (1986)
https://doi.org/10.1063/1.337608

Some investigations on the chemisorption and thermal heterogeneous decomposition of the MOCVD adduct ClMe2GaAsEt3

F. Maury, G. Constant, P. Fontaine and J.P. Biberian
Journal of Crystal Growth 78 (1) 185 (1986)
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Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE

K. Kamon, M. Shimazu, K. Kimura, M. Mihara and M. Ishii
Journal of Crystal Growth 77 (1-3) 297 (1986)
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Gas phase depletion and flow dynamics in horizontal MOCVD reactors

J. Van de Ven, G.M.J. Rutten, M.J. Raaijmakers and L.J. Giling
Journal of Crystal Growth 76 (2) 352 (1986)
https://doi.org/10.1016/0022-0248(86)90381-7

X-ray diffuse scattering by composition waves in GaAlAs

C. Bocchi, P. Franzosi and C. Ghezzi
Journal of Applied Physics 57 (10) 4533 (1985)
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Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor-phase epitaxy

S. N. G. Chu, S. Nakahara, K. E. Strege and W. D. Johnston
Journal of Applied Physics 57 (10) 4610 (1985)
https://doi.org/10.1063/1.335368

Effect of alloy clustering on the high-temperature electron mobility in In1−xGaxAsyP1−y

Pallab K. Bhattacharya and Joseph W. Ku
Journal of Applied Physics 58 (3) 1410 (1985)
https://doi.org/10.1063/1.336092

Transient capacitance study of electron traps in AlGaAs grown with As2

P. M. Mooney, R. Fischer and H. Morkoç
Journal of Applied Physics 57 (6) 1928 (1985)
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Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy

Bernard Jusserand, François Alexandre, Daniel Paquet and Guy Le Roux
Applied Physics Letters 47 (3) 301 (1985)
https://doi.org/10.1063/1.96199

X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs

J. Massies and J. P. Contour
Applied Physics Letters 46 (12) 1150 (1985)
https://doi.org/10.1063/1.95740

Hydrodynamic Instabilities and the Transition to Turbulence

F. H. Busse, J. P. Gollub, S. A. Maslowe and H. L. Swinney
Topics in Applied Physics, Hydrodynamic Instabilities and the Transition to Turbulence 45 289 (1985)
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The mechanism of the growth of InP by MOCVD: A flow-tube investigation of the pyrolysis of the indium precursor

J. Haigh and S. O'Brien
Journal of Crystal Growth 68 (2) 550 (1984)
https://doi.org/10.1016/0022-0248(84)90463-9

Reversal in the growth or dissolution of III‐V heterostructures by liquid phase epitaxy

M. B. Small and R. Ghez
Journal of Applied Physics 55 (4) 926 (1984)
https://doi.org/10.1063/1.333145

Very narrow interface multilayer III–V heterostructures by organometallic vapor phase epitaxy

P.M. Frijlink, J.P. André and J.L. Gentner
Journal of Crystal Growth 70 (1-2) 435 (1984)
https://doi.org/10.1016/0022-0248(84)90299-9

A study of zinc doping in metallo-organic chemical vapor deposition of InP

A. W. Nelson and L. D. Westbrook
Journal of Applied Physics 55 (8) 3103 (1984)
https://doi.org/10.1063/1.333307

Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy

H. Künzel, K. Ploog, K. Wünstel and B. L. Zhou
Journal of Electronic Materials 13 (2) 281 (1984)
https://doi.org/10.1007/BF02656681

Influence of clustering on the mobility of III-V semiconductor alloys

P. Blood and A. D. C. Grassie
Journal of Applied Physics 56 (6) 1866 (1984)
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Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

E. F. Schubert, K. Ploog, H. D�mbkes and K. Heime
Applied Physics A Solids and Surfaces 33 (2) 63 (1984)
https://doi.org/10.1007/BF00617610

Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxy

H. Jung, A. Fischer and K. Ploog
Applied Physics A Solids and Surfaces 33 (1) 9 (1984)
https://doi.org/10.1007/BF01197079

Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature

J. Klem, W. T. Masselink, D. Arnold, et al.
Journal of Applied Physics 54 (9) 5214 (1983)
https://doi.org/10.1063/1.332747