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Article cité :
B. Perrin
J. Physique Lett., 43 1 (1982) 5-10
Citations de cet article :
148 articles | Pages :
Growth and doping of InGaAsP/InP by liquid-phase epitaxy
F. Fiedler, H.-H. Wehmann and A. Schlachetzki Journal of Crystal Growth 74 (1) 27 (1986) https://doi.org/10.1016/0022-0248(86)90245-9
Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors
Hisashi Seki and Akinori Koukitu Journal of Crystal Growth 74 (1) 172 (1986) https://doi.org/10.1016/0022-0248(86)90261-7
Effect of hydrogen on undoped and lightly Si-doped molecular beam epitaxial GaAs layers
Yi-Ching Pao, D. Liu, W. S. Lee and J. S. Harris Applied Physics Letters 48 (19) 1291 (1986) https://doi.org/10.1063/1.96956
GaAs crystal growth from coordination compounds using the organometallic chemical vapor deposition process for solar cells
A. Zaouk and G. Constant Solar & Wind Technology 3 (1) 21 (1986) https://doi.org/10.1016/0741-983X(86)90044-5
On the role of Hydrogen in the MOCVD of GaAs
G. Arens, H. Heinecke, N. Pütz, H. Lüth and P. Balk Journal of Crystal Growth 76 (2) 305 (1986) https://doi.org/10.1016/0022-0248(86)90375-1
Uniform growth of GaAs by MOCVD on multi-wafers
Masakiyo Ikeda, Seiji Kojima and Yuzo Kashiwayanagi Journal of Crystal Growth 77 (1-3) 157 (1986) https://doi.org/10.1016/0022-0248(86)90296-4
Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactor
L. Stock and W. Richter Journal of Crystal Growth 77 (1-3) 144 (1986) https://doi.org/10.1016/0022-0248(86)90294-0
Characterization of GaxIn1−xAs/GaAs heterostructures grown by low pressure MOVPE
A.P. Roth, R.A. Masut, M. Sacilotti, et al. Journal of Crystal Growth 77 (1-3) 571 (1986) https://doi.org/10.1016/0022-0248(86)90354-4
Thermodynamic analysis of the MOVPE growth process
Akinori Koukitu, Takeyuki Suzuki and Hisashi Seki Journal of Crystal Growth 74 (1) 181 (1986) https://doi.org/10.1016/0022-0248(86)90262-9
Orientation and temperature dependence of H2S adsorption on cylindrical Ge and GaAs samples
H.J. Kuhr, W. Ranke and J. Finster Surface Science 178 (1-3) 171 (1986) https://doi.org/10.1016/0039-6028(86)90293-1
The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy
G.B. Stringfellow Journal of Crystal Growth 75 (1) 91 (1986) https://doi.org/10.1016/0022-0248(86)90229-0
The application of holographic interferometry to the visualization of flow and temperature profiles in a MOCVD reactor cell
J.E. Williams and R.W. Peterson Journal of Crystal Growth 77 (1-3) 128 (1986) https://doi.org/10.1016/0022-0248(86)90292-7
Low-temperature phase diagram of the Ga-As-Sb system and liquid-phase-epitaxial growth of lattice-matched GaAsSb on (100) InAs substrates
H. Mani, A. Joullie, F. Karouta and C. Schiller Journal of Applied Physics 59 (8) 2728 (1986) https://doi.org/10.1063/1.336981
Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition
J. van de Ven, H. G. Schoot and L. J. Giling Journal of Applied Physics 60 (5) 1648 (1986) https://doi.org/10.1063/1.337254
Influence of immiscibility in liquid-phase epitaxy growth of InGaPAs on GaAs
Masahiko Kondo, Sho Shirakata, Taneo Nishino and Yoshihiro Hamakawa Journal of Applied Physics 60 (10) 3539 (1986) https://doi.org/10.1063/1.337608
Some investigations on the chemisorption and thermal heterogeneous decomposition of the MOCVD adduct ClMe2GaAsEt3
F. Maury, G. Constant, P. Fontaine and J.P. Biberian Journal of Crystal Growth 78 (1) 185 (1986) https://doi.org/10.1016/0022-0248(86)90517-8
Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE
K. Kamon, M. Shimazu, K. Kimura, M. Mihara and M. Ishii Journal of Crystal Growth 77 (1-3) 297 (1986) https://doi.org/10.1016/0022-0248(86)90315-5
An analytical study of the Chemical Vapor Deposition (CVD) processes in a rotating pedestal reactor
K. Chen and A.R. Mortazavi Journal of Crystal Growth 76 (1) 199 (1986) https://doi.org/10.1016/0022-0248(86)90025-4
Selective growth of GaAs in the MOMBE and MOCVD systems
H. Heinecke, A. Brauers, F. Grafahrend, et al. Journal of Crystal Growth 77 (1-3) 303 (1986) https://doi.org/10.1016/0022-0248(86)90316-7
Gas phase depletion and flow dynamics in horizontal MOCVD reactors
J. Van de Ven, G.M.J. Rutten, M.J. Raaijmakers and L.J. Giling Journal of Crystal Growth 76 (2) 352 (1986) https://doi.org/10.1016/0022-0248(86)90381-7
X-ray diffuse scattering by composition waves in GaAlAs
C. Bocchi, P. Franzosi and C. Ghezzi Journal of Applied Physics 57 (10) 4533 (1985) https://doi.org/10.1063/1.335354
Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor-phase epitaxy
S. N. G. Chu, S. Nakahara, K. E. Strege and W. D. Johnston Journal of Applied Physics 57 (10) 4610 (1985) https://doi.org/10.1063/1.335368
Effect of alloy clustering on the high-temperature electron mobility in In1−xGaxAsyP1−y
Pallab K. Bhattacharya and Joseph W. Ku Journal of Applied Physics 58 (3) 1410 (1985) https://doi.org/10.1063/1.336092
Transient capacitance study of electron traps in AlGaAs grown with As2
P. M. Mooney, R. Fischer and H. Morkoç Journal of Applied Physics 57 (6) 1928 (1985) https://doi.org/10.1063/1.334426
Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy
Bernard Jusserand, François Alexandre, Daniel Paquet and Guy Le Roux Applied Physics Letters 47 (3) 301 (1985) https://doi.org/10.1063/1.96199
X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs
J. Massies and J. P. Contour Applied Physics Letters 46 (12) 1150 (1985) https://doi.org/10.1063/1.95740
Molecular beam epitaxy
B A Joyce Reports on Progress in Physics 48 (12) 1637 (1985) https://doi.org/10.1088/0034-4885/48/12/002
Hydrodynamic Instabilities and the Transition to Turbulence
F. H. Busse, J. P. Gollub, S. A. Maslowe and H. L. Swinney Topics in Applied Physics, Hydrodynamic Instabilities and the Transition to Turbulence 45 289 (1985) https://doi.org/10.1007/3-540-13319-4_20
Heat and mass transfer in horizontal vapor phase epitaxy reactors
Kuan Chen Journal of Crystal Growth 70 (1-2) 64 (1984) https://doi.org/10.1016/0022-0248(84)90248-3
The mechanism of the growth of InP by MOCVD: A flow-tube investigation of the pyrolysis of the indium precursor
J. Haigh and S. O'Brien Journal of Crystal Growth 68 (2) 550 (1984) https://doi.org/10.1016/0022-0248(84)90463-9
Adducts in the growth of III–V compounds
R.H. Moss Journal of Crystal Growth 68 (1) 78 (1984) https://doi.org/10.1016/0022-0248(84)90401-9
Reversal in the growth or dissolution of III‐V heterostructures by liquid phase epitaxy
M. B. Small and R. Ghez Journal of Applied Physics 55 (4) 926 (1984) https://doi.org/10.1063/1.333145
Growth of GaxIn1 −xAs and GaxIn1 −xAsyP1 −y using preformed adducts
R.H. Moss and P.C. Spurdens Journal of Crystal Growth 68 (1) 96 (1984) https://doi.org/10.1016/0022-0248(84)90403-2
Very narrow interface multilayer III–V heterostructures by organometallic vapor phase epitaxy
P.M. Frijlink, J.P. André and J.L. Gentner Journal of Crystal Growth 70 (1-2) 435 (1984) https://doi.org/10.1016/0022-0248(84)90299-9
Summary of the proceedings of the thirteenth calphad meeting
Calphad 8 (3) 191 (1984) https://doi.org/10.1016/0364-5916(84)90013-0
A study of zinc doping in metallo-organic chemical vapor deposition of InP
A. W. Nelson and L. D. Westbrook Journal of Applied Physics 55 (8) 3103 (1984) https://doi.org/10.1063/1.333307
Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy
H. Künzel, K. Ploog, K. Wünstel and B. L. Zhou Journal of Electronic Materials 13 (2) 281 (1984) https://doi.org/10.1007/BF02656681
Influence of clustering on the mobility of III-V semiconductor alloys
P. Blood and A. D. C. Grassie Journal of Applied Physics 56 (6) 1866 (1984) https://doi.org/10.1063/1.334200
A critical appraisal of growth mechanisms in MOVPE
G.B. Stringfellow Journal of Crystal Growth 68 (1) 111 (1984) https://doi.org/10.1016/0022-0248(84)90405-6
A critical comparison of MOCVD and MBE for heterojunction devices
P.D. Dapkus Journal of Crystal Growth 68 (1) 345 (1984) https://doi.org/10.1016/0022-0248(84)90436-6
Mechanism of carbon incorporation in MOCVD GaAs
T.F. Kuech and E. Veuhoff Journal of Crystal Growth 68 (1) 148 (1984) https://doi.org/10.1016/0022-0248(84)90410-X
Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors
E. F. Schubert, K. Ploog, H. D�mbkes and K. Heime Applied Physics A Solids and Surfaces 33 (2) 63 (1984) https://doi.org/10.1007/BF00617610
Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxy
H. Jung, A. Fischer and K. Ploog Applied Physics A Solids and Surfaces 33 (1) 9 (1984) https://doi.org/10.1007/BF01197079
Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions
J. Weyher and J. Van De Ven Journal of Crystal Growth 63 (2) 285 (1983) https://doi.org/10.1016/0022-0248(83)90217-8
OMVPE growth of GaInAs
C.P. Kuo, R.M. Cohen and G.B. Stringfellow Journal of Crystal Growth 64 (3) 461 (1983) https://doi.org/10.1016/0022-0248(83)90329-9
Adducts in MOVPE of III–V compounds
R.H. Moss Journal of Crystal Growth 65 (1-3) 463 (1983) https://doi.org/10.1016/0022-0248(83)90087-8
Indium phosphide chloride vapour phase epitaxy — A re-appraisal
P.L. Giles, P. Davies and N.B. Hasdell Journal of Crystal Growth 64 (1) 60 (1983) https://doi.org/10.1016/0022-0248(83)90249-X
Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature
J. Klem, W. T. Masselink, D. Arnold, et al. Journal of Applied Physics 54 (9) 5214 (1983) https://doi.org/10.1063/1.332747
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