Articles citing this article

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Cited article:

Material Effects on Stress-Induced Defect Generation in Trenched Silicon-on-Insulator Structures

W. A. Nevin, K. Somasundram, P. McCann, S. Magee and A. T. Paxton
Journal of The Electrochemical Society 148 (11) G649 (2001)
https://doi.org/10.1149/1.1408636

Theory of dislocations in diamond and silicon and their interaction with hydrogen

M I Heggie, S Jenkins, C P Ewels, et al.
Journal of Physics: Condensed Matter 12 (49) 10263 (2000)
https://doi.org/10.1088/0953-8984/12/49/327

The global phase of the nucleon-nucleon amplitudes and proton-nucleus scattering

M Lassaut, R J Lombard and J Van de Wiele
Journal of Physics G: Nuclear and Particle Physics 19 (12) 2079 (1993)
https://doi.org/10.1088/0954-3899/19/12/013

In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals

Masato Imai and Koji Sumino
Philosophical Magazine Part B 47 (4) 599 (1983)
https://doi.org/10.1080/13642818308246459

In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals

Masato Imai and Koji Sumino
Philosophical Magazine A 47 (4) 599 (1983)
https://doi.org/10.1080/01418618308245248