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Cited article:
J.C. Bruyère , A. Deneuville
J. Physique Lett., 41 2 (1980) 27-29
This article has been cited by the following article(s):
6 articles
Advances In Atomic, Molecular, and Optical Physics
J.T. Bahns, P.L. Gould and W.C. Stwalley Advances In Atomic, Molecular, and Optical Physics 42 171 (2000) https://doi.org/10.1016/S1049-250X(08)60187-1
Some problems encountered during the measurement of the activation energy of dark conductivity of undoped hydrogenated amorphous silicon films
R. Meaudre Thin Solid Films 148 (2) 121 (1987) https://doi.org/10.1016/0040-6090(87)90149-0
Temperature dependent studies of the optical properties of post-hydrogenated sputtered a-Si:H
F De Chelle, J.M Berger, A Deneuville, et al. Journal of Non-Crystalline Solids 64 (1-2) 1 (1984) https://doi.org/10.1016/0022-3093(84)90200-X
Characterisation of a-Si:H by complex impedance measurements
P.Y Timbrell, B Ranchoux and H Hamdi Journal of Non-Crystalline Solids 64 (1-2) 21 (1984) https://doi.org/10.1016/0022-3093(84)90202-3
Thickness dependence of hydrogen in a-Si : H films deposited on c-Si
J.F. Currie, P. Depelsenaire, S. Galarneau, et al. Journal de Physique Lettres 42 (15) 373 (1981) https://doi.org/10.1051/jphyslet:019810042015037300
Nuclear Physics Methods in Materials Research
M. Toulemonde, J. J. Grob, P. Siffert, A. Deneuville and J. C. Bruyere Nuclear Physics Methods in Materials Research 340 (1980) https://doi.org/10.1007/978-3-322-85996-9_31