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Cited article:
W. Granier , P. Bernier , M. Dohri , J. Alizon , H. Robert
J. Physique Lett., 42 13 (1981) 301-304
This article has been cited by the following article(s):
10 articles
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Tellurium Solubility in TlGaTe2 and TlInTe2 and the Electrophysical Properties of Solid Solutions
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Effective Bandgap Lowering of CdS Deposited by Successive Ionic Layer Adsorption and Reaction
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Mössbauer Spectroscopy
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On the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon
Kashish Sharma, Annalisa Branca, Andrea Illiberi, et al. Advanced Energy Materials 1 (3) 401 (2011) https://doi.org/10.1002/aenm.201000074
Electronic and Optical Properties of A—(Si, Ge):H Alloys
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NMR study of both 19F and 205Tl motions in TlZrF5
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New evidence for a fluctuating band-gap in amorphous semiconductors
D J Dunstan Journal of Physics C: Solid State Physics 16 (17) L567 (1983) https://doi.org/10.1088/0022-3719/16/17/004