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Cited article:

Dipolar relaxation effects in Al/SiO2/Si structures investigated by Transient Capacitance Spectroscopy

E. Rosencher, R. Coppard, D. Bois, J.C. Pfister

J. Physique Lett., 45 10 (1984) 493-499

DOI: https://doi.org/10.1051/jphyslet:019840045010049300

This article has been cited by the following article(s):

Field-induced spin-density-wave transitions and rapid oscillations observed in the microwave surface impedance of(TMTSF)2ClO4

P. Fertey, M. Poirier and H. Müller
Physical Review B 57 (22) 14357 (1998)
https://doi.org/10.1103/PhysRevB.57.14357

Electrical properties of MIS structures with BN insulating layer

K. Dmowski, B. Lepley, A. Bath, et al.
Diamond and Related Materials 7 (6) 817 (1998)
https://doi.org/10.1016/S0925-9635(97)00309-9

Probing of impurity potential well at the Si/SiO2 interface by electric-field-enhanced emission

E. Rosencher, R. Coppard and D. Bois
Journal of Applied Physics 57 (8) 2823 (1985)
https://doi.org/10.1063/1.335218