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Cited article:

High-Temperature In situ Deformation of GaAs Micro-pillars: Lithography Versus FIB Machining

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JOM 68 (11) 2761 (2016)
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Plastic deformation of gallium arsenide micropillars under uniaxial compression at room temperature

Johann Michler, Kilian Wasmer, Stephan Meier, Fredrik Östlund and Klaus Leifer
Applied Physics Letters 90 (4) (2007)
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Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

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The 30° dislocations in plastically deformed gallium phosphide

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Nucleation of dislocations and twins within heteroepitaxial In1−xGaxAs layers grown on (001) InP under tensile stress conditions

G. Wagner and P. Paufler
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Defect Structure in Te‐doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults

Peter Paufler, Gerald Wagner and Katrin Grosse
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https://doi.org/10.1002/crat.2170280102

Plastic deformation of GaAs single crystals as a function of electronic doping II: Low temperatures (20–300°C)

P. Borvin, J. Rabier and H. Garem
Philosophical Magazine A 61 (4) 647 (1990)
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Dislocation mobilities and low-temperature macroscopic plasticity of III-V compound semiconductors

J. Rabier and P. Boivirn
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The photoplastic effect in GaAs, a model for device degradation phenomena

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Slip and twinning in high-stress-deformed GaAs and the influence of doping

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Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C

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Low temperature plasticity of brittle materials. A new device for compressive testing under confining pressure

P. Francois, A. Lefebvre and G. Vanderschaeve
Physica Status Solidi (a) 109 (1) 187 (1988)
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The origin of microtwinning in room temperature indented undoped and n-doped GaAs crystals

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Single stacking faults in high-stress deformed semi-insulating GaAs

A. Lefebvre, Y. Androussi and G. Vanderschaeve
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Glide of extended dislocation in III-V compounds

B.C. De Cooman and C.B. Carter
Proceedings, annual meeting, Electron Microscopy Society of America 45 308 (1987)
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