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Cited article:

Determination of the free energy level of deep centers, with application to GaAs

D. Pons
Applied Physics Letters 37 (4) 413 (1980)
https://doi.org/10.1063/1.91926

Detailed electrical characterisation of the deep Cr acceptor in GaAs

G M Martin, A Mitonneau, D Pons, A Mircea and D W Woodward
Journal of Physics C: Solid State Physics 13 (20) 3855 (1980)
https://doi.org/10.1088/0022-3719/13/20/009

Effect of electric field on deep-level transients in GaAs and GaP

S. Makram-Ebeid
Applied Physics Letters 37 (5) 464 (1980)
https://doi.org/10.1063/1.91966

Interaction of deep-level traps with the lowest and upper conduction minima in InP

O. Wada, A. Majerfeld and A. N. M. M. Choudhury
Journal of Applied Physics 51 (1) 423 (1980)
https://doi.org/10.1063/1.327391

Deep‐level transient spectroscopy studies of Ni‐ and Zn‐diffused vapor‐phase‐epitaxyn‐GaAs

D. L. Partin, J. W. Chen, A. G. Milnes and L. F. Vassamillet
Journal of Applied Physics 50 (11) 6845 (1979)
https://doi.org/10.1063/1.325884

Measurement of the chromium concentration in semi-insulating GaAs using optical absorption

G. M. Martin, M. L. Verheijke, J.A.J. Jansen and G. Poiblaud
Journal of Applied Physics 50 (1) 467 (1979)
https://doi.org/10.1063/1.325635

New technique for identification of deep-level trap emission to indirect conduction minima in GaAs

A. Majerfeld and P. K. Bhattacharya
Applied Physics Letters 33 (3) 259 (1978)
https://doi.org/10.1063/1.90325