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Article cité :
A. Mircea , A. Mitonneau , J. Vannimenus
J. Physique Lett., 38 1 (1977) 41-43
Citations de cet article :
15 articles
Defect pairs and clusters related to the EL2 centre in GaAs
Sherif Makram-Ebeid and P. Boher Revue de Physique Appliquée 23 (5) 847 (1988) https://doi.org/10.1051/rphysap:01988002305084700
Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donor
Phil Won Yu Solid State Communications 43 (12) 953 (1982) https://doi.org/10.1016/0038-1098(82)90937-1
Complex nature of gold-related deep levels in silicon
D. V. Lang, H. G. Grimmeiss, E. Meijer and M. Jaros Physical Review B 22 (8) 3917 (1980) https://doi.org/10.1103/PhysRevB.22.3917
Determination of the free energy level of deep centers, with application to GaAs
D. Pons Applied Physics Letters 37 (4) 413 (1980) https://doi.org/10.1063/1.91926
Detailed electrical characterisation of the deep Cr acceptor in GaAs
G M Martin, A Mitonneau, D Pons, A Mircea and D W Woodward Journal of Physics C: Solid State Physics 13 (20) 3855 (1980) https://doi.org/10.1088/0022-3719/13/20/009
Niveaux profonds dans le GaAs implanté bore
B. Toulouse and P.N. Favennec Revue de Physique Appliquée 15 (4) 869 (1980) https://doi.org/10.1051/rphysap:01980001504086900
Effect of electric field on deep-level transients in GaAs and GaP
S. Makram-Ebeid Applied Physics Letters 37 (5) 464 (1980) https://doi.org/10.1063/1.91966
Semi-Insulating III–V Materials
G. M. Martin Semi-Insulating III–V Materials 13 (1980) https://doi.org/10.1007/978-1-4684-9193-7_2
Interaction of deep-level traps with the lowest and upper conduction minima in InP
O. Wada, A. Majerfeld and A. N. M. M. Choudhury Journal of Applied Physics 51 (1) 423 (1980) https://doi.org/10.1063/1.327391
Deep‐level transient spectroscopy studies of Ni‐ and Zn‐diffused vapor‐phase‐epitaxyn‐GaAs
D. L. Partin, J. W. Chen, A. G. Milnes and L. F. Vassamillet Journal of Applied Physics 50 (11) 6845 (1979) https://doi.org/10.1063/1.325884
Measurement of the chromium concentration in semi-insulating GaAs using optical absorption
G. M. Martin, M. L. Verheijke, J.A.J. Jansen and G. Poiblaud Journal of Applied Physics 50 (1) 467 (1979) https://doi.org/10.1063/1.325635
Thermally Stimulated Relaxation in Solids
D. V. Lang Topics in Applied Physics, Thermally Stimulated Relaxation in Solids 37 93 (1979) https://doi.org/10.1007/3540095950_9
Niveaux profonds dans les diodes électroluminescentes GaAs-GaAlAs
B. Balland Revue de Physique Appliquée 13 (5) 232 (1978) https://doi.org/10.1051/rphysap:01978001305023200
Transient current trap spectroscopy (TCTS) in GaAs/GaAlAs heterojunctions
B. Balland, R. Blondeau and P. Pinard Solid State Communications 26 (11) 679 (1978) https://doi.org/10.1016/0038-1098(78)90718-4
New technique for identification of deep-level trap emission to indirect conduction minima in GaAs
A. Majerfeld and P. K. Bhattacharya Applied Physics Letters 33 (3) 259 (1978) https://doi.org/10.1063/1.90325