Explanation of the large spin-dependent recombination effect in semiconductors
J. Physique Lett., 39 4 (1978) 51-54
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1 (2017)
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https://doi.org/10.1063/1.4996298
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https://doi.org/10.1103/PhysRevB.95.241201
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https://doi.org/10.1103/PhysRevB.96.085311
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https://doi.org/10.1179/1743284715Y.0000000129
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https://doi.org/10.1016/j.jmmm.2015.07.063
99 (2016)
https://doi.org/10.1109/IIRW.2016.7904912
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1553 (2016)
https://doi.org/10.1109/PVSC.2016.7749880
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3E.4.1 (2015)
https://doi.org/10.1109/IRPS.2015.7112718
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171 357 (2015)
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177 (2014)
https://doi.org/10.1007/978-1-4614-7909-3_8
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