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Article cité :
A. Mircea , A. Mitonneau
J. Physique Lett., 40 2 (1979) 31-33
Citations de cet article :
24 articles
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Electron traps in AlGaAs grown by molecular-beam epitaxy
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EL2 Defect in GaAs
M Kaminska Physica Scripta T19B 551 (1987) https://doi.org/10.1088/0031-8949/1987/T19B/038
Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels
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Festkörperprobleme 25
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EL2 and Related Defects in GaAs--Challenges and Pitfalls
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Real and apparent effects of strong electric fields on the electron emission from midgap levels EL2 and EL0 in GaAs
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Deep traps in GaAs under hydrostatic pressure
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Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs
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Spectroscopic line fitting to DLTS data
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Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs
S. Makram–Ebeid MRS Proceedings 2 (1980) https://doi.org/10.1557/PROC-2-495
Compensation mechanisms in GaAs
G. M. Martin, J. P. Farges, G. Jacob, J. P. Hallais and G. Poiblaud Journal of Applied Physics 51 (5) 2840 (1980) https://doi.org/10.1063/1.327952
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J.L. Pautrat Solid-State Electronics 23 (6) 661 (1980) https://doi.org/10.1016/0038-1101(80)90052-0
Effect of electric field on deep-level transients in GaAs and GaP
S. Makram-Ebeid Applied Physics Letters 37 (5) 464 (1980) https://doi.org/10.1063/1.91966
Auger de-excitation of a metastable state in GaAs
A. Mitonneau and A. Mircea Solid State Communications 30 (3) 157 (1979) https://doi.org/10.1016/0038-1098(79)90977-3
Phonon assisted tunnel emission of electrons from deep levels in GaAs
D. Pons and S. Makram-Ebeid Journal de Physique 40 (12) 1161 (1979) https://doi.org/10.1051/jphys:0197900400120116100