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Article cité :

Employing constant photocurrent method for the study of defects in silicon thin films

Hitendra K. Malik, Sucheta Juneja and Sushil Kumar
Journal of Theoretical and Applied Physics 13 (2) 107 (2019)
https://doi.org/10.1007/s40094-019-0325-4

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

A.A. Dakhel, Khalil E. Jasim, S. Cassidy and F.Z. Henari
Materials Science and Engineering: B 178 (16) 1062 (2013)
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Electrical conductivity, Seebeck coefficient and optical properties of SnO2 film deposited on ITO by dip coating

Fahrettin Yakuphanoglu
Journal of Alloys and Compounds 470 (1-2) 55 (2009)
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Characterization of the viscoelastic behavior of complex fluids using the piezoelastic axial vibrator

Jérôme J. Crassous, Raphael Régisser, Matthias Ballauff and Norbert Willenbacher
Journal of Rheology 49 (4) 851 (2005)
https://doi.org/10.1122/1.1917843

Distribution of the midgap density of states and their capture cross-sections in hydrogenated amorphous silicon deduced from space-charge-limited conduction in the dark and under illumination

R. Meaudre * and M. Meaudre
Philosophical Magazine Letters 85 (4) 185 (2005)
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Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors

R. Meaudre and M. Meaudre
Applied Physics Letters 85 (2) 245 (2004)
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Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents

M Meaudre, R Meaudre, S Vignoli and O Marty
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Thickness dependence of density of gap states in diamond films studied using space-charge-limited current

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Density of electron state (DOS) distribution in AlN films near the Fermi level position as measured by SCLC and DLTS

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Midgap density of states in hydrogenated polymorphous silicon

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The density of states in silicon nanostructures determined by space-charge-limited current measurements

Takahiro Matsumoto, Hidenori Mimura, Nobuyoshi Koshida and Yasuaki Masumoto
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The principle of a new method for determining local trapping states by space-charge-limited current

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The Impact of a Long-Ranged Random Potential on the Transport Properties of Amorphous Semiconductors

Harald Overhof
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Trap Density Measurements in Hydrogenated Amorphous Silicon Thin Film Prepared by Glow Discharge Technique

Ajay Tyagi, P J George, Nakul Parashar and A Mozumder
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Radiofrequency-plasma-deposited hydrogenated fluorinated silicon-carbon alloy films

Gautam Ganguly, Joydeep Dutta, Swati Ray and A. K. Barua
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Metastable effects in the dc conductivity of undoped glow discharge and sputtered hydrogenated amorphous silicon

R. Meaudre, P. Jensen and M. Meaudre
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Observations of cellular and dendritic growth of a smectic-B–smectic-Ainterface

John Bechhoefer, Patrick Oswald, Albert Libchaber and Claude Germain
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Determination of density of localized states in amorphous silicon alloys from the low field conductance of thin n-i-n diodes

Michael Shur and Michael Hack
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The relationship between space-charge-limited current and density of states in amorphous silicon

J. W. Orton and M. J. Powell
Philosophical Magazine B 50 (1) 11 (1984)
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Localized density of states in amorphous silicon determined by electrophotography

O. Imagawa, T. Akiyama and K. Shimakawa
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