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Article cité :
A. Bourret , C. Colliex , P. Trebbia
J. Physique Lett., 44 1 (1983) 33-38
Citations de cet article :
15 articles
Advances in Imaging and Electron Physics
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Study of a bismuth (001) surface compound by analysis of high resolution electron microscope images
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The Physics and Technology of Amorphous SiO2
Ian H. Wilson The Physics and Technology of Amorphous SiO2 487 (1988) https://doi.org/10.1007/978-1-4613-1031-0_62
Dislocation transmission through ∑ = 9 symmetrical tilt boundaries in silicon and germanium
X. Baillin, J. Pelissier, J. J. Bacmann, A. Jacques and A. George Philosophical Magazine A 55 (2) 143 (1987) https://doi.org/10.1080/01418618708209842
Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold
V. V. Aristov, I. E. Bondarenko, J. Heydenreich, et al. Physica Status Solidi (a) 102 (2) 687 (1987) https://doi.org/10.1002/pssa.2211020229
Electron microdiffraction studies of new SiO2precipitates in silicon
Y. Kim, J. C. H. Spence, N. Long, W. Bergholz and M. O’Keeffe Journal of Applied Physics 62 (2) 419 (1987) https://doi.org/10.1063/1.339814
Twin structure in coesite studied by high resolution electron microscopy
Alain Bourret, E. Hinze and H. D. Hochheimer Physics and Chemistry of Minerals 13 (3) 206 (1986) https://doi.org/10.1007/BF00308163
An illustrated review of various factors governing the high spatial resolution capabilities in EELS microanalysis
Christian Colliex Ultramicroscopy 18 (1-4) 131 (1985) https://doi.org/10.1016/0304-3991(85)90130-5
Transmission Electron Microscope Studies of O, C, N Precipitation in Crystalline Silicon
A. Bourret MRS Proceedings 59 (1985) https://doi.org/10.1557/PROC-59-223
Polycrystalline Semiconductors
A. Broniatowski Springer Series in Solid-State Sciences, Polycrystalline Semiconductors 57 95 (1985) https://doi.org/10.1007/978-3-642-82441-8_6
Polycrystalline Semiconductors
Marc Aucouturier Springer Series in Solid-State Sciences, Polycrystalline Semiconductors 57 47 (1985) https://doi.org/10.1007/978-3-642-82441-8_4
Early stages of oxygen segregation and precipitation in silicon
A. Bourret, J. Thibault‐Desseaux and D. N. Seidman Journal of Applied Physics 55 (4) 825 (1984) https://doi.org/10.1063/1.333178
Electron beam cutting in amorphous alumina sheets
M. E. Mochel, J. A. Eades, M. Metzger, J. I. Meyer and J. M. Mochel Applied Physics Letters 44 (5) 502 (1984) https://doi.org/10.1063/1.94812