J. Physique Lett. 41, 31-34 (1980)
DOI: 10.1051/jphyslet:0198000410203100

Effect of a hydrogen plasma on various a-Si : Hx structures at low temperatures

J.C. Bruyère et A. Deneuville

Groupe des Transitions de Phases, C.N.R.S., B.P. 166, 38042 Grenoble Cedex, France

Abstract
The possibility of changing the electronic properties of a-Si : H films by contact with a hydrogen argon plasma at 190 °C is demonstrated. The variation in hydrogen content, optical gap and conductivity versus 1/T for increasing interaction, times is reported.

Résumé
Nous montrons la possibilité de modifier les propriétés électroniques de films a-Si : H maintenus à 190 °C en les soumettant à un plasma d'argon-hydrogène. Nous indiquons la variation du contenu en hydrogène, du gap optique et de l'énergie d'activation suivant la durée de l'interaction film-plasma.

PACS
7280C - Electrical conductivity of elemental semiconductors.
7280N - Electrical conductivity of amorphous and glassy semiconductors.
7320H - Surface impurity and defect levels: energy levels of adsorbed species.
7360F - Electronic properties of semiconductor thin films.

Key words
amorphous semiconductors -- electrical conductivity of amorphous semiconductors and insulators -- elemental semiconductors -- semiconductor thin films -- silicon -- sputtered coatings -- A Si:H sub x structures -- electronic properties -- optical gap -- conductivity -- H plasma -- semiconductors -- glow discharges